Abstract

Variation of properties of films during growth in a vertical reactor for gas phase epitaxy with variation of parameters of technological process with account native convection

Author(s): E.L.Pankratov, E.A.Bulaeva

In this paper we analyzed mass and heat transport during growth films in a vertical reactors for gas phase epitaxy with account native convection by using recently introduced analytical approach for prognosis of the above processes. Native convection takes a significant influence on growth of films at high temperature. We determine several conditions to increase homogeneity of epitaxial layers with varying parameters of technological process.